Adjustment of Terahertz Properties Assigned to the First Lowest Transition of (D+, X) Excitonic Complex in a Single Spherical Quantum Dot Using Temperature and Pressure

This theoretical study is devoted to the effects of pressure and temperature on optoelectronic properties assigned first lowest transition (D+,X) excitonic complex (exciton-ionized donor) inside a single AlAs/GaAs/AlAs spherical quantum dot. Calculations are performed within effective mass approximation theory using variational method. Optical absorption refractive index as function degree confinement, pressure, investigated. Numerical calculation shows that favors electron-hole electron-ionized donor attractions which leads an enhancement binding energy, while increasing tends reduce it. Our investigations show also resonant peaks coefficient located in terahertz region they undergo shift higher (lower) therahertz frequencies when (temperature) increases. The opposite caused by have great practical importance because offer alternative approach for adjustment control optical resulting from between fundamental excited state exciton bound ionized dopant. comparison exciton, impurity facilitates experimental identification these transitions often close. investigation responses (high energy region) (low peaks. whole conclusions may lead novel light detector or source range.